Power semiconductor module as H-bridge circuit and method for producing the same
US7449778B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 26, 2007 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module (41) as H-bridge circuit (42) has four power semiconductor chips (N1, N2, P1, P2) and a semiconductor control chip (IC). The semiconductor chips (N1, N2, P1, P2, IC) are arranged on three mutually separate large-area lead chip contact areas (43 to 45) of a lead plane (80). The semiconductor control chip (IC) is arranged on a centrally arranged lead chip contact area (45). An n-channel power semiconductor chip (N1, N2) as low-side switch (58, 59) and a p-channel power semiconductor chip (P1, P2) as high-side switch (48, 49) are in each case arranged on two laterally arranged lead chip contact areas (43, 44). The n-channel power semiconductor chips (N1, N2) are jointly at an earth potential (50) and the p-channel power semiconductor chips (P1, P2) are electrically connected to separate supply voltage sources (VS1, VS2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.