Non-volatile semiconductor memory device
US7450427B2 · kind B2 · utility
13Cited by
5References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2006 |
| Grant date | Nov 11, 2008 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/24
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes a memory cell, and a reference cell including a same structure as the memory cell. A detecting circuit detects a timing when a voltage of a reference bit line connected with the reference cell becomes lower than or equal to a setting voltage, and generates a control signal in response to the detection of the timing. A sense amplifier senses and amplifies a difference between a voltage of a bit line connected with the memory cell and a reference voltage in response to the control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.