Diffusion system
US7452423B2 · kind B2 · utility
6Cited by
12References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2004 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Aug 9, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the wafer; a buffer case, which externally isolates an exhaust port and a door for loading and unloading the wafer into and out or the main chamber; and a used gas exhaustion system, which exhausts a used gas after the reaction is finished in the main chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.