Spin transistor with ultra-low energy base-collector barrier
US7453084B2 · kind B2 · utility
4Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2005 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Nov 28, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.