Nanowire light emitting device and method of fabricating the same
US7453097B2 · kind B2 · utility
7Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2005 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Feb 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.