Body contact formation in partially depleted silicon on insulator device
US7453121B2 · kind B2 · utility
2Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2003 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Dec 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI device (100) has a gate electrode with one or more additional gate regions (120), and oxygen or halogen ions (128) under the additional gate regions (120). The oxygen or halogen ions (128) form thicker gate oxide regions or shallow trench isolation regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.