MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop
US7453300B2 · kind B2 · utility
8Cited by
18References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2005 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Jun 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0963
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A multi-threshold voltage complementary metal oxide semiconductor (MTCMOS) flip-flop, a circuit including the MTCMOS flip-flop, and a method of forming the MTCMOS flip-flop are disclosed. The MTCMOS flip-flop breaks a leakage current path during a sleep mode to retain an output data signal. The MTCMOS flip-flop typically further uses a data feedback unit to retain the output data signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.