Magnet tunneling junction with RF sputtered gallium oxide as insulation barrier for recording head
US7453673B2 · kind B2 · utility
0Cited by
6References
17Claims
0Family size
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Key dates
| Filing date | Feb 9, 2005 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Feb 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/307
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunneling junction device has a fixed ferromagnetic layer, a free ferromagnetic layer, and an insulating tunnel barrier layer made of gallium oxide. The insulating tunneling barrier layer is deposited by RF sputtering of gallium oxide. The magnetic tunneling junction device has a resistance area product less than 7 Ω·μm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.