Non-volatile memory cell with improved programming technique and density
US7453726B1 · kind B1 · utility
2Cited by
10References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 23, 2007 |
| Grant date | Nov 18, 2008 |
| Priority date | — |
| Expiry date | Jan 23, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A single 4-transistor non-volatile memory (NVM) cell includes a shared static random access memory cell. The NVM cell utilizes a reverse Fowler-Nordheim tunneling programming technique that, in combination with the shared SRAM cell structure, allows an entire cell array to be programmed at two cycles. A single NVM cell approach with shared SRAM allows a 50% area reduction with an insignificant increase in program time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.