Method and system for measuring laser induced phenomena changes in a semiconductor device
US7456032B2 · kind B2 · utility
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2References
12Claims
0Family size
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Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Sep 30, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R17/105
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an electrical bridge circuit across the semiconductor device, the semiconductor device being connected as one of at least four circuit elements of the bridge circuit; inducing the changes in the semiconductor; and monitoring a balance condition of the bridge circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.