Apparatus for atomic layer deposition
US7456429B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2006 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | May 30, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a distribution manifold for thin-film material deposition onto a substrate comprising a plurality of inlet ports for a sequence of gaseous materials, an output face comprising a plurality of open elongated output channels, each channel extending in a length direction substantially in parallel. The distribution manifold can be employed in a deposition system for thin film deposition, further comprising a plurality of sources for a plurality of gaseous materials and a support for positioning a substrate in pre-designed close proximity to the output face of the distribution manifold. During operation of the system, relative movement between the output face and the substrate support is accomplished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.