Semiconductor device
US7456487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2004 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
This disclosure concerns a semiconductor device that includes a first base layer; second base layers provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers; an emitter layer formed on a surface of the second base layers; a collector layer provided below a second surface of the first base layer, an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being electrically isolated from the emitter layer and the second base layers, wherein the space section includes a semiconductor layer being deeper than the second base layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.