RF MEMS switch and fabrication method thereof
US7456713B2 · kind B2 · utility
1Cited by
6References
62Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Nov 25, 2008 |
| Priority date | — |
| Expiry date | Dec 28, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.