Solid-state image device
US7459735B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Feb 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
Abstract
A solid-state imaging device capable of reducing the occurrence of a dark current and a pixel defect is provided.A solid-state imaging device 10 is formed in which a plurality of photoelectric conversion elements 4 are formed in a semiconductor substrate 1; circuits 5 which read out signal charge from each of the plurality of photoelectric conversion elements 4 are respectively formed on the semiconductor substrate 1; light is applied from the opposite side to the circuits 5 which read out signal charge from each of the plurality of photoelectric conversion elements; and a gettering region is provided in an element-isolation area 2 which separate the photoelectric conversion elements 4 adjacent to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.