Flash memory device and erasing method thereof
US7460412B2 · kind B2 · utility
69Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2006 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3477
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of post-programming a flash memory device includes the steps of: post-programming memory cells of a selected word line in a predetermined unit; determining, after incrementing an address for selecting the next word line, whether the incremented address matches one of reference addresses; and varying the post-programming unit of the selected memory cells whenever the incremented address matches one of reference addresses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.