Multi-wavelength semiconductor laser device
US7460579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Dec 2, 2008 |
| Priority date | — |
| Expiry date | Oct 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/0809
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.