Floating gate field effect transistors for chemical and/or biological sensing
US7462512B2 · kind B2 · utility
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Key dates
| Filing date | Jan 11, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, VT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.