Semiconductor device
US7462892B2 · kind B2 · utility
5Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2006 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Aug 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
A semiconductor device includes an emitter layer: a base layer; and a collector layer, wherein the collector layer and the emitter layer each include a heavily doped thin sublayer having a high impurity concentration, and each of the heavily doped thin sublayers has an impurity concentration higher than those of semiconductor layers adjacent to each heavily doped thin sublayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.