Semiconductor device having capacitor with upper electrode of conductive oxide and its manufacture method
US7462898B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Dec 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A ferroelectric capacitor is formed above a substrate and made of a lamination of a lower electrode, a capacitor ferroelectric film and an upper electrode stacked in this order. The upper electrode is made of conductive oxide and has such an oxygen concentration distribution as an oxygen concentration in a lower layer region of the upper electrode becomes lower than an oxygen concentration in an upper layer region. An interlayer insulating film covers the ferroelectric capacitor. A via hole is formed through the interlayer insulating film and reaches a position deeper than an upper surface of the upper electrode. The via hole is stopped at a position shallower than a position at which the oxygen concentration of the upper electrode becomes maximum. A conductive member contacts the upper electrode on a bottom of the via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.