Short circuit protection by gate voltage sensing
US7463079B2 · kind B2 · utility
10Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2006 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Jun 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0027
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A protection circuit monitors the gate voltage of an insulated gate bipolar transistor (IGBT) or metal oxide semiconductor field effect transistor (MOSFET) to protect the transistor during a time when it is being turned on. In one embodiment, the circuit monitors a transient gate voltage of the transistor when it is turned on. A short or overcurrent condition is detected when the gate voltage exceeds a delayed reference signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.