Method of fabricating carbide and nitride nano electron emitters
US7465210B2 · kind B2 · utility
6Cited by
14References
20Claims
0Family size
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Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Sep 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30488
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.