Image transfer process for thin film component definition
US7465532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a thin film component according to one embodiment comprises forming a wafer having a thin film layer, a release layer, and a patterned layer of photoresist; transferring the pattern of the layer of photoresist to the release layer and the thin film layer; adding a layer of metal to the wafer; heating the wafer to a predetermined temperature for a period of time sufficient to cause deformation of the photoresist to an extent that the photoresist creates cracks in the metal layer; applying a solvent to dissolve at least a portion of the release layer, the solvent penetrating the cracks in the metal layer to reach the release layer; and removing the release layer and any portions of the layers above the release layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.