Testing method for semiconductor device, testing apparatus therefor, and semiconductor device suitable for the test
US7465923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2007 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/20058
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a method of testing, in the manufacturing process of an LSI (large scale integration) device, a result apparatus therefor, and a cross-sectional microstructure of the LSI device. The method includes thinning a semiconductor chip such that the semiconductor chip includes a substrate crystal and a portion added by the manufacturing process, irradiating an electron beam to the semiconductor chip, detecting an electron beam transmitted through the semiconductor chip to thereby obtain an electron beam diffraction image, removing an electron beam diffracted due to the substrate crystal, and comparing, in the electron beam diffraction image, the thickness of grating stripes obtained from the substrate crystal with the thickness of the portion added by the manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.