Ferroelectric memory, multivalent data recording method and multivalent data reading method
US7465980B2 · kind B2 · utility
12Cited by
3References
11Claims
0Family size
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Key dates
| Filing date | Sep 8, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Oct 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.