Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device
US7466526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Dec 22, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3909
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.