Electrostatic discharge protection circuit
US7466527B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2007 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Oct 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
An electro-static discharge protection circuit including a first-LDNMOS transistor, a second-LDNMOS transistor, a first-resistor, and a gate-driven resistance is provided. The drain of the first-LDNMOS transistor is served as an electro-static input end, the P-body and source of the first-LDNMOS transistor are connected to each other. A coupling-voltage signal determines whether the first-LDNMOS transistor is turned on or not. The drain, P-body, and gate of the second-LDNMOS transistor are respectively connected to the drain of the first-LDNMOS transistor, the source of the first-LDNMOS transistor, and a common-ground potential. The first-resistor is connected between the source of the first-LDNMOS transistor and the common-ground potential. One end of the gate-driven resistance is connected to the common-ground potential, the other end of the gate-driven resistance is connected to the source of the second-LDNMOS transistor to generate the coupling-voltage signal, and the coupling-voltage signal is coupled to the gate of the first-LDNMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.