Method of manufacturing a semiconductor device

US7468306B2 · kind B2 · utility

Assignee

• Qimonds AG · DE

Inventors

• Andreas Thies · Tirschenreuth, DE
• Klaus Muemmler · Dresden, DE

Key dates

• Filing date: May 31, 2005
• Grant date: Dec 23, 2008
• Expiry date: Aug 3, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on the contact pads. A first dielectric layer is deposited thus covering at least said pillars. A first conductive layer is deposited between said pillars covered with the first dielectric layer. The pillars are removed thus providing trenches in the first conductive layer having walls covered with the dielectric layer. A second conductive layer is deposited on the first dielectric layer in the trench. A second dielectric layer is deposited such that at least the second conductive layer in the trench is covered by the second dielectric layer. A third conductive layer is deposited on the second dielectric layer.