Back side contact solar cell with doped polysilicon regions
US7468485B1 · kind B1 · utility
166Cited by
16References
20Claims
0Family size
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Key dates
| Filing date | Aug 11, 2005 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Feb 28, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In one embodiment, a back side contact solar cell includes a tunnel oxide layer formed on a back side of a substrate. A polysilicon layer is formed on the tunnel oxide layer, and dopant sources are formed on the polysilicon layer. Dopants from the dopant sources are diffused into the polysilicon layer to form p-type and n-type regions therein. The p-type and n-type regions form p-n junctions that, among other advantages, allow for relatively high conversion efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.