Pin photodetector with mini-mesa contact layer
US7468503B2 · kind B2 · utility
1Cited by
7References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Nov 25, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A PIN photodetector includes a first semiconductor contact layer, a semiconductor absorption layer having a larger area than the first semiconductor contact layer, a semiconductor passivation layer positioned between the first semiconductor contact layer and absorption layer, and a second semiconductor contact layer. The semiconductor absorption layer and passivation layers are positioned between the first and second semiconductor contact layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.