Thin film transistor substrate and display apparatus having the same
US7470950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2006 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Feb 9, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/043
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A TFT substrate with reduced pixel defect rate is presented. The TFT substrate includes a pixel electrode, a negative line to apply a reverse voltage to the pixel electrode, and a recovery transistor including a drain electrode overlapping a part of the negative line with a insulating layer disposed between the negative line and the drain electrode. A contact hole is formed on the negative line and the drain electrode, and a bridge electrode connects the negative line and the drain electrode through the contact hole.The thin film transistor substrate and a display apparatus presented herein protect a data line assembly metal layer and decrease pixel defect. An improved reverse voltage efficiency is applied to a pixel electrode to protect a drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.