Method for fabricating a variable-resistance element including heating a RMCoO3 perovskite structure in an oxygen atmosphere
US7473612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second electrodes, the method including: (1) a first electrode production step; (2) a step of forming the material layer on the first electrode, wherein the material layer comprises an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3, wherein R is a rare-earth element and M is an alkaline-earth element; (3) an oxygen treatment step of heating the material layer in an oxygen atmosphere; (4) a step of forming the second electrode on the material layer that was subjected to the oxygen treatment step; and (5) a hydrogen treatment step of heating the material layer in a reducing atmosphere containing hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.