Non-volatile semiconductor memory devices and methods of fabricating the same
US7473959B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jul 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
Nonvolatile memory devices and related methods of fabricating nonvolatile memory devices are disclosed. A nonvolatile memory device includes a tunnel insulation film on a semiconductor substrate, a charge-trapping layer on the tunnel insulation film, a block insulation film on the charge-trapping layer, and a gate electrode on the blocking insulation film. The blocking insulation film includes a stacked film structure of a high-dielectric film and a barrier insulation film. The high-dielectric film has a first potential barrier relative to the charge-trapping layer. The barrier insulation film has a second potential barrier relative to the charge-trapping layer which is higher than the first potential barrier. The blocking insulation film has a thickness in a range of about 5 Å to about 15 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.