Patent · US Active

Reorientation of magnetic layers and structures having reoriented magnetic layers

US7474094B2 · kind B2 · utility

2Cited by
2References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 30, 2005
Grant dateJan 6, 2009
Priority date
Expiry dateJan 22, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/325
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Methods of reorienting ferromagnetic layers of a plurality of magnetoresistive elements and structures formed by the methods. The plurality of magnetoresistive elements, preferably GMR multilayer elements, are manufactured and arranged on a planar substrate. The method effectively allows selective orientation and reorientation of distinct ferromagnetic layers of a subset of the magnetoresistive elements on the substrate. The methods make either use of subsequent annealing processes making use of magnetic fields pointing in different directions. Prior to application of a subsequent annealing process, a complimentary subset of magnetoresistive elements is effectively shielded by selective deposition of a soft-magnetic shielding layer. Alternatively, a single annealing process can be performed when an externally applied magnetic field is locally modified by soft-magnetic structures, such as fluxguides.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.