Patent · US Active

Shift register latch with embedded dynamic random access memory scan only cell

US7474574B1 · kind B1 · utility

3Cited by
3References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 2, 2007
Grant dateJan 6, 2009
Priority date
Expiry dateJul 2, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/3202
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A hybrid shift register latch which uses static memory cells for system operations and a dynamic memory cell for testing operations only. An L1 storage element and an L2 storage element are provided in an array cell. The L1 storage element comprises a static random access memory cell. The L1 storage element is used during system and testing operation of the array cell. The L2 storage element comprises a dynamic random access memory cell. The L2 storage element is used only during testing operation of the array cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.