Patent · US Active

Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure

US7476558B2 · kind B2 · utility

2Cited by

8References

11Claims

0Family size

Assignee

INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

Hongliang Zhu · Beijing, CN
Wei Wang · Tangxia, CN

Key dates

Filing date	Aug 30, 2005
Grant date	Jan 13, 2009
Priority date	—
Expiry date	Aug 7, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2304/00
WIPO fieldOptics
WIPO sectorInstruments

Abstract

This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.