Techniques for reducing effects of photoresist outgassing
US7476878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Jul 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.