Vertical organic field effect transistor
US7476893B2 · kind B2 · utility
11Cited by
1References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 24, 2004 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Aug 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/631
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.