Semiconductor integrated circuit device and vehicle-mounted radar system using the same
US7476918B2 · kind B2 · utility
1Cited by
0References
16Claims
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Assignee
Inventors
Key dates
| Filing date | Nov 22, 2005 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Jun 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device includes a HFET formed on part of a substrate made of sapphire and including a Group III-V nitride semiconductor layer, a dielectric film formed on the substrate to cover the top and side surfaces and upper corners of the Group III-V nitride semiconductor layer, a microstrip line formed with the dielectric film interposed between the substrate and the microstrip line, and a drain lead which is formed on part of the dielectric film and through which the HFET is electrically connected to the microstrip line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.