Patent · US Active

Low compressive TiNx materials and methods of making the same

US7476949B2 · kind B2 · utility

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100Claims
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Inventor

Key dates

Filing dateJul 15, 2005
Grant dateJan 13, 2009
Priority date—
Expiry dateAug 8, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B26/0841
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Disclosed herein is a microelectromechanical device having a structural layer composed of a low stress TiNx layer and a method of making the same.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.