Magnetic random access memory
US7477538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Mar 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A technique for reducing influences of the bias magnetic field developed by yokes used for concentrating the magnetic field on magnetoresistance elements, on MRAM operations. An MRAM is composed of a plurality of magnetoresistance elements having magnetic anisotropy in a first direction; a wiring extended in a second direction different from the first direction, through which a write current flows for writing data into the magnetoresistance elements; and a yoke layer formed of ferromagnetic material, extended along the second direction, and covering at least a portion of a surface of the wiring. The plurality of magnetoresistance elements include a first magnetoresistance element, and a second magnetoresistance element of which the distance from an end of the yoke layer is further than that of the first magnetoresistance element. The first magnetoresistance element has a magnetic anisotropy stronger than that of the second magnetoresistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.