Semiconductor memory device, a local precharge circuit and method thereof
US7477558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Oct 28, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device, a local precharge circuit and a method thereof are provided. The example semiconductor memory device may include a local input/output line connected to a bit line coupled with a memory cell, through a column selection transistor, the local input/output line providing a transmission path on which to transmit a data signal through the bit line to a local sense amplifier and a local precharge circuit configured to adjust a precharge voltage level of the local input/output line based on a status of an active mode and a status of a column selection signal. The active mode may be a period where a word line is enabled. The example local precharge circuit may be included within the example semiconductor memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.