High power diode laser based source
US7477670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2005 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Dec 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.