Medical device and method of manufacturing
US7477943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2003 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Aug 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.