Process for producing GaN substrate
US7479188B2 · kind B2 · utility
3Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2004 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Mar 22, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing an inexpensive large high-quality GaN substrate which comprises forming a MgO buffer layer on a high-quality substrate, generating a ZnO layer on the MgO buffer layer while performing polarity control, growing a GaN layer on the ZnO layer while performing polarity control, and melting the ZnO layer, thereby producing a GaN substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.