Mask design for enhancing line end resolution
US7479355B1 · kind B1 · utility
3Cited by
0References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Feb 27, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask design for enhancing line end resolution is provided. In an embodiment, a mask for use in patterning an underlying layer comprises opaque regions and transparent regions arranged to define a line having an end, a slit extending laterally through the line a spaced distance from the end of the line, and a feature extending above or below the space adjacent to the end of the line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.