Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step
US7479451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2005 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Jul 15, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G2215/0141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.