System and method for driving a power field-effect transistor (FET)
US7479770B2 · kind B2 · utility
16Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2005 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | May 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04206
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A system and method is provided for driving a power field-effect transistor (FET). In one embodiment, a system comprises a control circuit that generates a control signal to provide a gate voltage of the power FET. The system further comprises a slope control circuit coupled between the control circuit and the power FET that is operative to dynamically control the rate-of-change of a gate voltage of the power FET to reduce electromagnetic interference (EMI) emissions and power loss resulting from switching the power FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.