Ion implantation of spin on glass materials
US7482267B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Apr 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A spin on glass SOG layer 30 is formed, then a PECVD barrier layer 40 over the SOG layer. Holes 50 in the SOG layer for vias are formed with a wine glass profile, so that in a peripheral region around the periphery of the holes, the barrier layer is thinner or absent, and ion implantation is performed substantially perpendicular to the layers, to reach the SOG layer through the barrier layer preferentially in the peripheral region. This enables the implantation to be concentrated on the peripheral region, without the need for implantation at a high angle and wafer rotation. This enables the manufacturing process to be simplified and hence costs reduced. By concentrating the implantation in the peripheral region where it can reduce moisture transfer to material in the holes, there is less risk of deplanarization due to the SOG shrinkage associated with ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.