Methods and apparatus for depositing tantalum metal films to surfaces and substrates
US7482289B2 · kind B2 · utility
0Cited by
3References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Mar 7, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition involves low valence oxidation state metal precursors soluble in liquid and/or compressible solvent fluids at liquid, near-critical, or supercritical conditions for the mixed precursor solutions. Metal film deposition is effected via thermal and/or photolytic activation of the metal precursors. The invention finds application in fabrication and processing of semiconductor, metal, polymer, ceramic, and like substrates or composites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.