Gallium nitride-based compound semiconductor multilayer structure and production method thereof
US7482635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2005 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | May 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output.The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.